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CAT28F010TRA-12T Datasheet(PDF) 5 Page - Catalyst Semiconductor |
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CAT28F010TRA-12T Datasheet(HTML) 5 Page - Catalyst Semiconductor |
5 / 14 page CAT28F010 5 Doc. No. 25005-0A 2/98 F-1 SUPPLY CHARACTERISTICS Limits Symbol Parameter Min Max. Unit VCC VCC Supply Voltage 4.5 5.5 V VPPL VPP During Read Operations 0 6.5 V VPPH VPP During Read/Erase/Program 11.4 12.6 V 5108 FHD F05 Note: (1) This parameter is tested initially and after a design or process change that affects the parameter. (2) Output floating (High-Z) is defined as the state where the external data line is no longer driven by the output buffer. (3) Input Rise and Fall Times (10% to 90%) < 10 ns. (4) Input Pulse Levels = 0.45V and 2.4V. For High Speed Input Pulse Levels 0.0V and 3.0V. (5) Input and Output Timing Reference = 0.8V and 2.0V. For High Speed Input and Output Timing Reference = 1.5V. (6) Low-Z is defined as the state where the external data may be driven by the output buffer but may not be valid. (7) For load and reference points, see Fig. 1 (8) For load and reference points, see Fig. 2 1.3V DEVICE UNDER TEST 1N914 3.3K CL = 100 pF OUT CL INCLUDES JIG CAPACITANCE INPUT PULSE LEVELS REFERENCE POINTS 2.0 V 0.8 V 2.4 V 0.45 V 5108 FHD F03A Figure 1. A.C. Testing Input/Output Waveform(3)(4)(5) Testing Load Circuit (example) 1.3V DEVICE UNDER TEST 1N914 3.3K CL = 30 pF OUT CL INCLUDES JIG CAPACITANCE 5108 FHD F04 INPUT PULSE LEVELS REFERENCE POINTS 3.0 V 0.0 V 1.5 V 5108 FHD F03 Figure 2. Highspeed A.C. Testing Input/Output Waveform(3)(4)(5) Testing Load Circuit (example) A.C. CHARACTERISTICS, Read Operation VCC = +5V ±10%, unless otherwise specified. 28F010-70(8) 28F010-90(7) 28F010-12(7) JEDEC Standard Symbol Symbol Parameter Min. Max. Min. Max. Min. Max. Unit tAVAV tRC Read Cycle Time 70 90 120 ns tELQV tCE CE Access Time 70 90 120 ns tAVQV tACC Address Access Time 70 90 120 ns tGLQV tOE OE Access Time 28 35 50 ns tAXQX tOH Output Hold from Address 0 0 0 ns OE/CE Change tGLQX tOLZ(1)(6) OE to Output in Low-Z 0 0 0 ns tELZX tLZ(1)(6) CE to Output in Low-Z 0 0 0 ns tGHQZ tDF(1)(2) OE High to Output High-Z 20 20 30 ns tEHQZ tDF(1)(2) CE High to Output High-Z 30 30 40 ns tWHGL(1) - Write Recovery Time 6 6 6 µs Before Read |
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