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CAT28F102T14R-45T Datasheet(PDF) 5 Page - Catalyst Semiconductor

Part # CAT28F102T14R-45T
Description  1 Megabit CMOS Flash Memory
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Manufacturer  CATALYST [Catalyst Semiconductor]
Direct Link  http://www.catalyst-semiconductor.com
Logo CATALYST - Catalyst Semiconductor

CAT28F102T14R-45T Datasheet(HTML) 5 Page - Catalyst Semiconductor

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CAT28F102
5
Doc. No. 25038-0A 2/98 F-1
INPUT PULSE LEVELS
REFERENCE POINTS
2.0 V
0.8 V
2.4 V
0.45 V
5108 FHD F04
Note:
(1)
This parameter is tested initially and after a design or process change that affects the parameter.
(2)
Output floating (High-Z) is defined as the state where the external data line is no longer driven by the output buffer.
(3)
Input Rise and Fall Times (10% to 90%) < 10 ns.
(4)
Input Pulse Levels = 0.45V and 2.4V. For high speed input pulse levels 0.0V and 3.0V.
(5)
Input and Output Timing Reference = 0.8V and 2.0V. For high speed input and output timing reference=1.5V.
(6)
Low-Z is defined as the state where the external data may be driven by the output buffer but may not be valid.
(7)
For Load and Reference Points see Figures 3 and 4
(8)
For Load and Reference Points see Figures 1 and 2
1.3V
DEVICE
UNDER
TEST
1N914
3.3K
CL = 100 pF
OUT
CL INCLUDES JIG CAPACITANCE
INPUT PULSE LEVELS
REFERENCE POINTS
2.0 V
0.8 V
2.4 V
0.45 V
5108 FHD F03
Figure 1. A.C. Testing Input/Output Waveform(3)(4)(5)
Figure 2. A.C. Testing Load Circuit (example)
Figure 3. High Speed A.C. Testing Input/Output Waveform(3)(4)(5)
JEDEC
Standard
28F102-45(7)
28F102-55(7) 28F102-70 (7) 28F102- 90 (8)
Symbol
Symbol
Parameter
Min.
Max.
Min. Max. Min.
Max.
Min.
Max
Unit
tAVAV
tRC
Read Cycle Time
45
55
70
90
ns
tELQV
tCE
CE Access Time
45
55
70
90
ns
tAVQV
tACC
Address Access Time
45
55
70
90
ns
tGLQV
tOE
OE Access Time
20
25
28
35
ns
tAXQX
tOH
Output Hold from Address
0
0
0
0
ns
OE/CE Chan
tGLQX
tOLZ(1)(6) OE to Output in Low-Z
0
0
0
0
ns
tELQX
tLZ(1)(6)
CE to Output in Low-Z
0
0
0
0
ns
tGHQZ
tDF(1)(2)
OE High to Output High-Z
15
15
18
20
ns
tEHQZ(1)(2)
-
CE High to Output High-Z
15
15
25
30
ns
tWHGL
Write Recovery Time Before
6
6
6
6
µs
Read
3V
0.0
A.C. CHARACTERISTICS, Read Operation
1.3V
DEVICE
UNDER
TEST
1N914
3.3K
CL = 100 pF
OUT
CL INCLUDES JIG CAPACITANCE
Figure 4. High Speed A.C. Testing Load Circuit (example)
V
CC = +5V ±10%, unless otherwise specified
1.5V
Vcc=5V+5%
30
Vcc=5V+5%


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