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2SJ200 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SJ200 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SJ200 2006-11-16 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain cut−off current IDSS VDS = −180 V, VGS = 0 ― ― −1.0 mA Gate leakage current IGSS VDS = 0, VGS = ±20 V ― ― ±0.5 μA Drain−source breakdown voltage V (BR) DSS ID = −10 mA, VGS = 0 −180 ― ― V Gate−source cut−off voltage (Note 2) VGS (OFF) VDS = −10 V, ID = −0.1 A −0.8 ― −2.8 V Drain−source saturation voltage VDS (ON) ID = −6 A, VGS = −10 V ― −1.5 −5.0 V Forward transfer admittance |Yfs| VDS = −10 V, ID = −3 A ― 4.0 ― S Input capacitance Ciss VDS = −30 V, VGS = 0, f = 1 MHz ― 1300 ― Output capacitance Coss VDS = −30 V, VGS = 0, f = 1 MHz ― 350 ― Reverse transfer capacitance Crss VDS = −30 V, VGS = 0, f = 1 MHz ― 200 ― pF Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VGS (OFF) Classification O: −0.8~−1.6, Y: −1.4~−2.8 This transistor is an electrostatic sensitive device. Please handle with caution. Marking |
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