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CAT24C44 Datasheet(PDF) 3 Page - Catalyst Semiconductor

Part No. CAT24C44
Description  256-Bit Serial Nonvolatile CMOS Static RAM
Download  8 Pages
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Maker  CATALYST [Catalyst Semiconductor]
Homepage  http://www.catalyst-semiconductor.com
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CAT24C44 Datasheet(HTML) 3 Page - Catalyst Semiconductor

   
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CAT24C44
3
Doc. No. 25019-0A 2/98 N-1
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55
°C to +125°C
Storage Temperature ....................... –65
°C to +150°C
Voltage on Any Pin with
Respect to Ground(2) ............. –2.0 to +VCC +2.0V
VCC with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25
°C)................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300
°C
Output Short Circuit Current(3) ........................ 100 mA
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns.
Maximum DC voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to VCC +1V.
RELIABILITY CHARACTERISTICS
Symbol
Parameter
Min.
Max.
Units
Reference Test Method
NEND(1)
Endurance
100,000
Cycles/Byte
MIL-STD-883, Test Method 1033
TDR(1)
Data Retention
10
Years
MIL-STD-883, Test Method 1008
VZAP(1)
ESD Susceptibility
2000
Volts
MIL-STD-883, Test Method 3015
ILTH(1)(4)
Latch-Up
100
mA
JEDEC Standard 17
CAPACITANCE TA = 25°C, f = 1.0 MHz, VCC = 5V
Symbol
Parameter
Max.
Unit
Conditions
CI/O(1)
Input/Output Capacitance
10
pF
VI/O = 0V
CIN(1)
Input Capacitance
6
pF
VIN = 0V
D.C. OPERATING CHARACTERISTICS
VCC = 5V ±10%, unless otherwise specified.
Limits
Symbol
Parameter
Min.
Typ.
Max.
Unit
Conditions
ICCO
Current Consumption (Operating)
3
mA
Inputs = 5.5V, TA = 0
°C
All Outputs Unloaded
ISB
Current Consumption (Standby)
30
µA
CE = VIL
ILI
Input Current
2
µA0 ≤ VIN ≤ 5.5V
ILO
Output Leakage Current
10
µA0 ≤ VOUT ≤ 5.5V
VIH
High Level Input Voltage
2
VCC
V
VIL
Low Level Input Voltage
0
0.8
V
VOH
High Level Output Voltage
2.4
V
IOH = –2mA
VOL
Low Level Output Voltage
0.4
V
IOL = 4.2mA


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