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CAT22C10 Datasheet(PDF) 4 Page - Catalyst Semiconductor

Part No. CAT22C10
Description  256-Bit Nonvolatile CMOS Static RAM
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Maker  CATALYST [Catalyst Semiconductor]
Homepage  http://www.catalyst-semiconductor.com
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CAT22C10 Datasheet(HTML) 4 Page - Catalyst Semiconductor

 
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CAT22C10
4
Doc. No. 25018-0A 2/98 N-1
A.C. CHARACTERISTICS, Read Cycle
VCC = +5V ±10%, unless otherwise specified.
22C10-20
22C10-30
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
Conditions
tRC
Read Cycle Time
200
300
ns
CL = 100pF
tAA
Address Access Time
200
300
ns
+1TTL gate
tCO
CS Access Time
200
300
ns
VOH = 2.2V
tOH
Output Data Hold Time
0
0
ns
VOL = 0.65V
tLZ(1)
CS Enable Time
0
0
ns
VIH = 2.2V
tHZ(1)
CS Disable Time
100
100
ns
VIL = 0.65V
A.C. CHARACTERISTICS, Write Cycle
VCC = +5V ±10%, unless otherwise specified.
22C10-20
22C10-30
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
Conditions
tWC
Write Cycle Time
200
300
ns
tCW
CS Write Pulse Width
150
150
ns
tAS
Address Setup Time
50
50
ns
CL = 100pF
tWP
Write Pulse Width
150
150
ns
+1TTL gate
tWR
Write Recovery Time
25
25
ns
VOH = 2.2V
tDW
Data Valid Time
100
100
ns
VOL = 0.65V
tDH
Data Hold Time
0
0
ns
VIH = 2.2V
tWZ(1)
Output Disable Time
100
100
ns
VIL = 0.65V
tOW
Output Enable Time
0
0
ns
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.


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