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PDTC144ET-215 Datasheet(PDF) 8 Page - NXP Semiconductors |
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PDTC144ET-215 Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 17 page PDTC144E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 9 — 15 November 2011 8 of 17 NXP Semiconductors PDTC144E series NPN resistor-equipped transistors; R1 = 47 k , R2 = 47 k VCE =5V (1) Tamb = 100 C (2) Tamb =25 C (3) Tamb = 40 C IC/IB =20 (1) Tamb = 100 C (2) Tamb =25 C (3) Tamb = 40 C Fig 6. DC current gain as a function of collector current; typical values Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values VCE =0.3 V (1) Tamb = 40 C (2) Tamb =25 C (3) Tamb = 100 C VCE =5V (1) Tamb = 40 C (2) Tamb =25 C (3) Tamb = 100 C Fig 8. On-state input voltage as a function of collector current; typical values Fig 9. Off-state input voltage as a function of collector current; typical values IC (mA) 10-1 102 10 1 006aac752 102 10 103 hFE 1 (1) (2) (3) 006aac753 IC (mA) 10-1 102 10 1 10-1 1 VCEsat (V) 10-2 (1) (2) (3) 006aac754 IC (mA) 10-1 102 10 1 1 10 VI(on) (V) 10-1 (1) (2) (3) IC (mA) 10-1 10 1 006aac755 1 10 VI(off) (V) 10-1 (1) (2) (3) |
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