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MIMMG50SR120UA Datasheet(PDF) 2 Page - Micross Components

Part No. MIMMG50SR120UA
Description  1200V 50A IGBT Module RoHS Compliant
Download  5 Pages
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Maker  MICROSS [Micross Components]
Homepage  http://www.micross.com
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MIMMG50SR120UA Datasheet(HTML) 2 Page - Micross Components

   
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MIMMG50SR120UA
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min. Typ. Max.
Unit
IGBT
VGE(th)
Gate - Emitter Threshold Voltage VCE=VGE, IC=2mA
5
6.2
7
V
IC=50A, VGE=15V, TJ=25°C
1.8
V
VCE(sat)
Collector - Emitter
Saturation Voltage
IC=50A, VGE=15V, TJ=125°C
2.0
V
VCE=1200V, VGE=0V, TJ=25°C
0.5
mA
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=125°C
2
mA
IGES
Gate Leakage Current
VCE=0V, VGE=±20V
-200
200
nA
Qge
Gate Charge
VCC=600V, IC=50A, VGE=±15V
611
nC
Cies
Input Capacitance
4.29
nF
Coes
Output Capacitance
0.30
nF
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
0.20
nF
td(on)
Turn - on Delay Time
270
ns
tr
Rise Time
60
ns
td(off)
Turn - off Delay Time
480
ns
tf
Fall Time
VCC=600V, IC=50A
RG =18Ω,VGE=±15V
TJ=25°C
Inductive Load
60
ns
td(on)
Turn - on Delay Time
290
ns
tr
Rise Time
60
ns
td(off)
Turn - off Delay Time
550
ns
tf
Fall Time
VCC=600V, IC=50A
RG =18Ω,VGE=±15V
TJ=125°C
Inductive Load
65
ns
6.0
mJ
Eon
Turn - on Switching Energy
8.4
mJ
3.7
mJ
Eoff
Turn - off Switching Energy
VCC=600V, IC=50A
TJ=25°C
RG =18Ω
TJ=125°C
VGE=±15V
TJ=25°C
Inductive Load
TJ=125°C
5.8
mJ
Free-Wheeling Diode
IF=50A, VGE=0V, TJ=25°C
1.9
2.3
V
VF
Forward Voltage
IF=50A, VGE=0V, TJ=125°C
1.7
2.1
V
trr
Reverse Recovery Time
180
ns
IRRM
Max. Reverse Recovery Current
60
A
Qrr
Reverse Recovery Charge
IF=50A, VR=800V
diF/dt=-1000A/μs
TJ=125°C
7.1
µC
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
RthJC
Junction-to-Case Thermal Resistance
Per IGBT
0.3
K /W
RthJCD
Junction-to-Case Thermal Resistance
Per Inverse Diode
0.6
K /W
Torque
Module-to-Sink
Recommended(M6)
3
5
N· m
Torque
Module Electrodes
Recommended(M5)
2.5
5
N· m
Weight
150
g


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