FCPF190N60E-ND datasheet(4/10 Pages) FAIRCHILD

Part #	FCPF190N60E-ND

Description	FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 20.6 A, 190 m廓

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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4 / 10 page

FCP190N60E / FCPF190N60E Rev. C10

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4

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation

Figure 8. On-Resistance Variation

vs. Temperature

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Safe Operating Area

for FCP190N60E

for FCPF190N60E

Figure 11. Maximum Drain Current

Figure 12. Eoss vs. Drain to Source Voltage

vs. Case Temperature

-100

-50

0

50

100

150

200

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

*Notes:

1. VGS = 0V

2. ID = 10mA

TJ, Junction Temperature [

oC]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

*Notes:

1. VGS = 10V

2. ID = 10A

TJ, Junction Temperature [

oC]

0.1

1

10

100

1000

0.01

0.1

1

10

100

10μs

100μs

1ms

10ms

VDS, Drain to Source Voltage [V]

Operation in This Area

is Limited by R DS(on)

*Notes:

1. TC = 25

oC

2. TJ = 150

oC

3. Single Pulse

DC

0.1

1

10

100

1000

0.01

0.1

1

10

100

10μs

100μs

1ms

10ms

VDS, Drain to Source Voltage [V]

Operation in This Area

is Limited by R DS(on)

*Notes:

1. TC = 25

oC

2. TJ = 150

oC

3. Single Pulse

DC

25

50

75

100

125

150

0

5

10

15

20

25

TC, Case Temperature [

oC]

0

100

200

300

400

500

600

0

2

4

6

8

10

V

DraintoSource Voltage [V]

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FCPF190N60E-ND Datasheet(PDF) 4 Page - Fairchild Semiconductor

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