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IRFHM830DPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFHM830DPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 8 page HEXFET® Power MOSFET Notes through are on page 8 Features and Benefits Applications 3.3mm x 3.3mm PQFN Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation g PD @ TC(Bottom) = 25°C Power Dissipation g Linear Derating Factor g W/°C TJ Operating Junction and TSTG Storage Temperature Range -55 to + 150 2.8 0.022 37 Max. 20 40h 160 ±20 30 16 40h V W A °C • Synchronous MOSFET for Buck Converters VDS 30 V RDS(on) max (@VGS = 10V) 4.3 m Ω Qg (typical) 13 nC RG (typical) 1.1 Ω ID (@Tc(Bottom) = 25°C) 40h A 3 2 1 8 7 6 5 4 D D D D S S S G IRFHM830DPbF 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 16, 2013 Features Benefits Low RDSon ( ≤ 4.3mΩ) Lower Conduction Losses Schottky intrinsic diode with low forward voltage Lower switching losses Low Thermal Resistance to PCB (<3.4°C/W) Increased Power Density 100% Rg tested Increased Reliability Low Profile (< 1.0mm) results in Increased Power Density Industry-Standard Pinout ⇒ Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Form Quantity IRFHM830DTRPbF PQFN 3.3mm x 3.3mm Tape and Reel 4000 IRFHM830DTR2PBF PQFN 3.3mm x 3.3mm Tape and Reel 400 EOL notice # 259 Orderable part number Package Type Standard Pack Note |
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