IRFH8321TRPBF datasheet(3/9 Pages) IRF

Part #	IRFH8321TRPBF

Description	HEXFETPower MOSFET

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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IRFH8321PbF

August 3, 2012

3

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 4. Normalized On-Resistance vs. Temperature

1

2

3

4

5

6

7

VGS, Gate-to-Source Voltage (V)

1.0

10

100

1000

TJ = 25°C

TJ = 150°C

VDS = 15V

60μs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

ID = 20A

VGS = 10V

1

10

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

0

102030405060

QG, Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

VDS= 24V

VDS= 15V

VDS= 6.0V

ID= 20A

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

VGS

TOP

10V

7.0V

5.0V

4.5V

3.5V

3.0V

2.75V

BOTTOM

2.5V

60μs PULSE WIDTH

Tj = 25°C

2.5V

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

2.5V

60μs PULSE WIDTH

Tj = 150°C

VGS

TOP

10V

7.0V

5.0V

4.5V

3.5V

3.0V

2.75V

BOTTOM

2.5V

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