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October 24, 2013

 

IRFH8303PbF

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

Tc = 25°C

Tj = 150°C

Single Pulse

10msec

1msec

OPERATION IN THIS AREA

LIMITED BY R

DS

(on)

100µsec

DC

Limited by package

Fig 8. Maximum Safe Operating Area

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

1000

TJ = 25°C

TJ = 150°C

VGS = 0V

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 9. Maximum Drain Current vs. Case Temperature

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Fig 10. Drain-to-Source Breakdown Voltage

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

25

50

75

100

125

150

TC , Case Temperature (°C)

0

50

100

150

200

250

300

Limited by package

-75 -50 -25

0

25

50

75 100 125 150

TJ , Temperature ( °C )

0.6

1.0

1.4

1.8

2.2

2.6

ID = 150µA

ID = 250µA

ID = 1.0mA

ID = 1.0A