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IRFH7110PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFH7110PBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 9 page  5/15/12 IRFH7110PbF HEXFET® Power MOSFET Notes through are on page 9 PD -97789 Features and Benefits www.irf.com 1 PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features Benefits Low RDSon (< 13.5mW) Lower Conduction Losses Low Thermal Resistance to PCB (< 1.2°C/W) Enables better thermal dissipation Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Note Form Quantity IRFH7110TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH7110TR2PBF PQFN 5mm x 6mm Tape and Reel 400 Orderable part number Package Type Standard Pack VDS 100 V Vgs max ± 20 V RDS(on) max (@VGS = 10V) 13.5 m QG (typical) 58 nC RG (typical) 0.6 ID (@Tc(Bottom) = 25°C) 50i A Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation g PD @TC(Bottom) = 25°C Power Dissipation g Linear Derating Factor g W/°C TJ Operating Junction and TSTG Storage Temperature Range -55 to + 150 3.6 0.029 104 Max. 11 37 h 240 ± 20 100 8.6 58 hi 50 i V W A °C |
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