IRF7749L1TRPBF datasheet(6/10 Pages) IRF

Part #	IRF7749L1TRPBF

Description	DirectFETPower MOSFET

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Manufacturer	IRF [International Rectifier]

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February 18, 2013

IRF7749L1TRPbF

Fig 17.

Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs

Fig 15. Typical Avalanche Current Vs.Pulsewidth

Fig 16. Maximum Avalanche Energy Vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 )

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of Tjmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 19a, 19b.

4. PD (ave) = Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. Iav = Allowable avalanche current.

7.

ΔT = Allowable rise in junction temperature, not to exceed

Tjmax (assumed as 25°C in Figure 15, 16).

tav = Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Iav = 2

DT/ [1.3·BV·Zth]

EAS (AR) = PD (ave)·ta

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

* VGS = 5V for Logic Level Devices

*

Inductor Current

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

• di/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

+

-

+

-

RG

VDD

D.U.T

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

0.1

1

10

100

1000

0.05

Duty Cycle = Single Pulse

0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔΤ j = 25°C and

Tstart = 150°C.

0.01

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔTj = 150°C and

Tstart =25°C (Single Pulse)

25

50

75

100

125

150

175

Starting TJ , Junction Temperature (°C)

0

40

80

120

160

200

240

280

TOP

Single Pulse

BOTTOM 1% Duty Cycle

ID = 120A

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