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IRF6892STRPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF6892STRPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 9 page  www.irf.com 1 4/4/12 IRF6892STRPbF IRF6892STR1PbF DirectFET® plus MOSFET with Schottky Diode Applicable DirectFET Outline and Substrate Outline Typical values (unless otherwise specified) ISOMETRIC Description The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6892SPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6892SPbF has been optimized for parameters that are critical in synchronous buck converter’s Sync FET sockets. Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.2mH, RG = 25Ω, IAS = 22A. Notes: PD - 97770 S3C l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application l Compatible with existing Surface Mount Techniques l 100% Rg tested Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 22 240 Max. 22 125 220 ±16 25 28 V A D G D S S S S1 S2 S3C M2 M4 L4 L6 L8 2 4 6 8 10 12 14 16 VGS, Gate -to -Source Voltage (V) 0.0 2.0 4.0 6.0 8.0 ID = 28A TJ = 25°C TJ = 125°C 0 10 20 304050 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 VDS= 20V VDS= 13V VDS= 5V ID= 22A Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 17nC 6.0nC 2.3nC 39nC 16nC 1.8V VDSS VGS RDS(on) RDS(on) 25V max ±16V max 1.3mΩ @ 10V 2.0mΩ @ 4.5V |
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