IRF6728MPBF datasheet(4/9 Pages) IRF

Part #	IRF6728MPBF

Description	HEXFET Power MOSFET plus Schottky Diode

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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IRF6728MTRPbF

4

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Fig 5. Typical Output Characteristics

Fig 4. Typical Output Characteristics

Fig 6. Typical Transfer Characteristics

Fig 7. Normalized On-Resistance vs. Temperature

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage

Fig 9. Typical On-Resistance vs.

Drain Current and Gate Voltage

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

VGS

TOP

10V

4.5V

3.5V

3.3V

3.0V

2.8V

2.5V

BOTTOM

2.3V

≤60μs PULSE WIDTH

Tj = 25°C

2.3V

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

VGS

TOP

10V

4.5V

3.5V

3.3V

3.0V

2.8V

2.5V

BOTTOM

2.3V

≤60μs PULSE WIDTH

Tj = 150°C

2.3V

1

2

3

4

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

TJ = 150°C

TJ = 25°C

TJ = -40°C

VDS = 15V

≤60μs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

ID = 23A

VGS = 10V

VGS = 4.5V

1

10

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

0

50

100

150

200

ID, Drain Current (A)

1

2

3

4

5

TJ = 25°C

Vgs = 3.5V

Vgs = 4.0V

Vgs = 4.5V

Vgs = 5.0V

Vgs = 10V

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