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IRGP4640-EPBF Datasheet(PDF) 3 Page - International Rectifier

Part # IRGP4640-EPBF
Description  INSULATED GATE BIPOLAR TRANSISTOR
Download  11 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRGP4640-EPBF Datasheet(HTML) 3 Page - International Rectifier

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IRGP4640PbF/IRGP4640-EPbF
www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
October 29, 2013
3
Fig. 2 - Maximum DC Collector Current vs.
CaseTemperature
Fig. 3 - Power Dissipation vs. Case
Temperature
Fig. 4 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE =20V
10
100
1000
VCE (V)
1
10
100
1000
1
10
100
1000
10000
VCE (V)
0.1
1
10
100
1000
1msec
10µsec
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
25
50
75
100
125
150
175
TC (°C)
0
10
20
30
40
50
60
70
25
50
75
100
125
150
175
TC (°C)
0
50
100
150
200
250
300
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
0.1
1
10
100
f , Frequency ( kHz )
0
10
20
30
40
50
60
70
80
For both:
Duty cycle : 50%
Tj = 175°C
Tsink = 100°C
Gate drive as specified
Power Dissipation = 125W
I
Square Wave:
V
CC
D io de as specified


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