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IRG7PH28UD1MPBF Datasheet(PDF) 3 Page - International Rectifier

Part # IRG7PH28UD1MPBF
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG7PH28UD1MPBF Datasheet(HTML) 3 Page - International Rectifier

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IRG7PH28UD1PbF/IRG7PH28UD1MPbF
3
www.irf.com
© 2012 International Rectifier
January 8, 2013
25
50
75
100
125
150
TC (°C)
0
5
10
15
20
25
30
25
50
75
100
125
150
TJ , Temperature (°C)
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
4.2
IC = 350µA
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
10
100
1000
10000
VCE(V)
1
10
100
0
2
4
6
8
10
VCE(V)
0
10
20
30
40
50
60
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 4
- Reverse Bias SOA
T
J
= 150°C; VGE = 20V
25
50
75
100
125
150
TC (°C)
0
20
40
60
80
100
120
Fig. 2
- Power Dissipation vs.
Case Temperature
0
2
4
6
8
10
VCE(V)
0
10
20
30
40
50
60
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 3
- Typical Gate Threshold Voltage
vs. Junction Temperature
Fig. 6
- Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
Fig. 5
- Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs


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