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IRG7PH28UD1PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRG7PH28UD1PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 10 page IRG7PH28UD1PbF/IRG7PH28UD1MPbF 2 www.irf.com © 2012 International Rectifier January 8, 2013 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 100µA V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 1.4 — V/°C VGE = 0V, IC = 1mA (25°C-150°C) VCE(on) Collector-to-Emitter Saturation Voltage — 1.95 2.30 V IC = 15A, VGE = 15V, TJ = 25°C — 2.4 — IC = 15A, VGE = 15V, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 V VCE = VGE, IC = 350µA gfe Forward Transconductance — 13 — S VCE = 50V, IC = 15A, PW = 20µs ICES Collector-to-Emitter Leakage Current — 1.0 100 µA VGE = 0V, VCE = 1200V — 100 — VGE = 0V, VCE = 1200V, TJ = 150°C VFM Diode Forward Voltage Drop — 1.1 1.2 V IF = 15A — 1.0 — IF = 15A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±30V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 60 90 IC = 15A Qge Gate-to-Emitter Charge (turn-on) — 10 15 nC VGE = 15V Qgc Gate-to-Collector Charge (turn-on) — 27 40 VCC = 600V Eoff Turn-Off Switching Loss — 543 766 µJ IC = 15A, VCC = 600V, VGE = 15V RG = 22, L = 1.0mH, TJ = 25°C td(off) Turn-Off delay time — 229 — ns Energy losses include tail & diode tf Fall time — 62 — reverse recovery Eoff Turn-Off Switching Loss — 939 — µJ IC = 15A, VCC = 600V, VGE=15V RG = 22, L = 1.0mH, TJ = 150°C td(off) Turn-Off delay time — 272 — ns Energy losses include tail & diode tf Fall time — 167 — reverse recovery Cies Input Capacitance — 1160 — VGE = 0V Coes Output Capacitance — 55 — pF VCC = 30V Cres Reverse Transfer Capacitance — 30 — f = 1.0Mhz TJ = 150°C, IC = 60A RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 960V, Vp ≤ 1200V Rg = 22 , VGE = +20V to 0V Notes: VCC = 80% (VCES), VGE = 20V, L = 25µH, RG = 22. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. R is measured at TJ of approximately 90°C. FBSOA operating conditions only. VGE = 0V, TJ = 75°C, PW ≤ 10µs. Thermal Resistance Parameter Min. Typ. Max. Units RθJC (IGBT) Junction-to-Case (IGBT) ––– ––– 1.09 RθJC (Diode) Junction-to-Case (Diode) ––– ––– 1.35 °C/W RθCS Case-to-Sink (flat, greased surface) ––– 0.24 ––– RθJA Junction-to-Ambient (typical socket mount) ––– ––– 40 |
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