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IRG4BC30KPBF Datasheet(PDF) 2 Page - International Rectifier

Part # IRG4BC30KPBF
Description  INSULATED GATE BIPOLAR TRANSISTOR 
Download  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4BC30KPBF Datasheet(HTML) 2 Page - International Rectifier

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IRG4BC30KPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
V
VGE = 0V, IC = 250µA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage „
18
—
—
V
VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —
0.54
—
V/°C VGE = 0V, IC = 1.0mA
—
2.21
—
IC = 14A
—
2.21 2.7
IC = 16A
VGE = 15V
—
2.88
—
IC = 28A
See Fig.2, 5
—
2.36
—
IC = 16A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
—
-12
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance …
5.4
8.1
—
S
VCE = 100V, IC = 16A
—
—
250
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
—
2.0
µA
VGE = 0V, VCE = 10V, TJ = 25°C
—
— 1100
VGE = 0V, VCE = 600V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
—
— ±100
nA
VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V
VCE(ON)
Collector-to-Emitter Saturation Voltage
Details of note  through … are on the last page
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
—
67
100
IC = 16A
Qge
Gate - Emitter Charge (turn-on)
—
11
16
nC
VCC = 400V
See Fig.8
Qgc
Gate - Collector Charge (turn-on)
—
25
37
VGE = 15V
td(on)
Turn-On Delay Time
—
26
—
tr
Rise Time
—
28
—
TJ = 25°C
td(off)
Turn-Off Delay Time
—
130 200
IC = 16A, VCC = 480V
tf
Fall Time
—
120 170
VGE = 15V, RG = 23Ω
Eon
Turn-On Switching Loss
—
0.36
—
Energy losses include "tail"
Eoff
Turn-Off Switching Loss
—
0.51
—
mJ
See Fig. 9,10,14
Ets
Total Switching Loss
—
0.87 1.3
tsc
Short Circuit Withstand Time
10
—
—
µs
VCC = 400V, TJ = 125°C
VGE = 15V, RG = 23Ω , VCPK < 500V
td(on)
Turn-On Delay Time
—
25
—
TJ = 150°C,
tr
Rise Time
—
29
—
IC = 16A, VCC = 480V
td(off)
Turn-Off Delay Time
—
190
—
VGE = 15V, RG = 23Ω
tf
Fall Time
—
190
—
Energy losses include "tail"
Ets
Total Switching Loss
—
1.2
—
mJ
See Fig. 11,14
Eon
Turn-On Switching Loss
—
0.26
—
TJ = 25°C, VGE = 15V, RG = 23Ω
Eoff
Turn-Off Switching Loss
—
0.36
—
IC = 14A, VCC = 480V
Ets
Total Switching Loss
—
0.62
—
Energy losses include "tail"
LE
Internal Emitter Inductance
—
7.5
—
nH
Measured 5mm from package
Cies
Input Capacitance
—
920
—
VGE = 0V
Coes
Output Capacitance
—
110
—
pF
VCC = 30V
See Fig. 7
Cres
Reverse Transfer Capacitance
—
27
—
ƒ = 1.0MHz
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
ns
ns


Similar Part No. - IRG4BC30KPBF

ManufacturerPart #DatasheetDescription
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International Rectifier
IRG4BC30KPBF IRF-IRG4BC30KPBF Datasheet
263Kb / 9P
   INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
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