Electronic Components Datasheet Search |
|
PACDN017 Datasheet(PDF) 3 Page - California Micro Devices Corp |
|
PACDN017 Datasheet(HTML) 3 Page - California Micro Devices Corp |
3 / 3 page ©1999 California Micro Devices Corp. All rights reserved. 11/98 3 CALIFORNIA MICRO DEVICES PAC DN017 215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com Similarly for negative ESD pulses, parasitic series inductance from the VN pin to the ground rail will lead to drastically increased negative voltage on the line being protected. Another consideration is the output impedance of the power supply for fast transient currents. Most power supplies exhibit a much higher output impedance to fast transient current spikes. In the VZ equation above, the VSupply term, in reality, is given by (VDC + Iesd x Rout), where VDC and Rout are the nominal supply DC output voltage and effective output impedance of the power supply respectively. As an example, a Routof 1 ohm would result in a 10V increment in VZ for a peak Iesd of 10A. To mitigate these effects, a Zener diode has been integrated into this Protection Array between VP and VN. This Zener diode clamps the maximum voltage of VP relative to VN at the breakdown voltage of the Zener diode. Although not strictly necessary, it is recommended that VP be bypassed to the ground plane with a high frequency bypass capacitor. This will lower the channel clamp voltage, and is especially effective when VP is much lower than the Zener breakdown voltage. The value of this bypass capacitor should be chosen such that it will absorb the charge transferred by the ESD pulse with minimal change in VP. Typically a value in the 0.1 µF to 0.2 µF range is adequate for IEC-61000-4-2 level 4 contact discharge protection (8KV). For higher ESD voltages, the bypass capacitor should be increased accordingly. Ceramic chip capacitors mounted with short printed circuit board traces are good choices for this application. Electrolytic capacitors should be avoided as they have poor high frequency characteristics. As a general rule, the ESD Protection Array should be located as close as possible to the point of entry of expected electrostatic discharges. The power supply bypass capacitor mentioned above should be as close to the VP pin of the Protection Array as possible, with minimum PCB trace lengths to the power supply and ground planes to minimize stray series inductance. |
Similar Part No. - PACDN017 |
|
Similar Description - PACDN017 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |