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20090209c

IXKH 35N60C5

IXYS reserves the right to change limits, test conditions and dimensions.

single pulse

0.01

0.02

0.05

0.1

0.2

0.5

10

0

10

-1

10

-2

10

-3

10

-4

10

-5

10

-6

10

0

10

-1

10

-2

10

-3

540

580

620

660

700

-60

-20

20

60

100

140

180

0

250

500

750

1000

20

60

100

140

180

Ciss

Coss

Crss

10

5

10

4

10

3

10

2

10

1

10

0

050

100

150

200

120V

40 0V

0

2

4

6

8

10

12

0

10

203040

5060

25 °C

150 °C

25 °C, 98%

150 °C, 98%

10

2

10

1

10

0

10

-1

00.5

11.5

2

25 °C

150 °C

0

40

80

120

160

02

4

6

8

10

typ

98 %

0

0.05

0.1

0.15

0.2

0.25

0.3

-60

-20

20

60

100

140

180

5V

5.5 V

6V

6.5 V

7V

20 V

0

0.1

0.2

0.3

0.4

0.5

010

20

30

40

50

f = 1 MHz

Fig. 5 Drain-source on-state resistance

Fig. 4 Typ. drain-source on-state

resistance characteristics of IGBT

Fig. 7 Forward characteristic

of reverse diode

Fig. 8

Typ. gate charge

Fig. 10 Avalanche energy

Fig. 11 Drain-source breakdown voltage

Fig. 6 Typ. transfer characteristics

Fig. 9 Typ. capacitances

Fig. 12 Max. transient thermal

impedance