IRF7507PbF

6

www.irf.com

Fig 18. Maximum Safe Operating Area

Fig 17. Typical On-Resistance Vs. Gate

Voltage

P - Channel

Fig 20. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 19. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

0.1

1

10

100

1000

0.00001

0.0001

0.001

0.01

0.1

1

10

100

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

1

2

J

DM

thJA

A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

1

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

N-P - Channel

0.1

1

10

100

1

10

100

OPERATION IN THIS AREA LIMITED

Single Pulse

T

T

= 150 C

= 25 C

°

°

J

C

-V

, Drain-to-Source Voltage (V)

DS

100us

1ms

10ms

0

100

200

300

400

500

1

10

100

A

DS

-V

, Drain-to-Source Voltage (V)

V

= 0V,

f = 1MHz

C

= C

+ C

, C

SHORTED

C

= C

C

= C

+ C

GS

iss

gs

gd

ds

rss

gd

oss

ds

gd

0

2

4

6

8

10

024

6

8

10

G

A

Q , Total Gate Charge (nC)

I = -1.2A

V

= -16V

FOR TEST CIRCUIT

SEE FIGURE 19

D

DS

2

3

4

5

6

7

8

0.100

0.150

0.200

0.250

0.300

-V

, Gate-to-Source Voltage (V)

GS

ID = -1.7A