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ILD620GB-X009T Datasheet(PDF) 2 Page - Vishay Siliconix |
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ILD620GB-X009T Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page ILD620, ILD620GB, ILQ620, ILQ620GB www.vishay.com Vishay Semiconductors Rev. 1.8, 12-Apr-13 2 Document Number: 83653 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Forward current IF ± 60 mA Surge current IFSM ± 1.5 A Power dissipation Pdiss 100 mW Derate linearly from 25 °C 1.3 mW/°C OUTPUT Collector emitter breakdown voltage BVCEO 70 V Collector current IC 50 mA t < 1 s IC 100 mA Power dissipation Pdiss 150 mW Derate from 25 °C 2mW/°C COUPLER Isolation test voltage t = 1 s VISO 5300 VRMS Isolation voltage VIORM 890 VP Total power dissipation Ptot 250 mW Package dissipation ILD620 400 mW ILD620GB 400 mW Derate from 25 °C 5.33 mW/°C Package dissipation ILQ620 500 mW ILQ620GB 500 mW Derate from 25 °C 6.67 mW/°C Creepage distance 7mm Clearance distance 7mm Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 VIO = 500 V, Tamb = 100 °C RIO 1011 Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Junction temperature Tj 100 °C Soldering temperature (1) 2 mm from case bottom Tsld 260 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = ± 10 mA VF 1 1.15 1.3 V Forward current VR = ± 0.7 V IF 2.5 20 μA Capacitance VF = 0 V, f = 1 MHz CO 25 pF Thermal resistance, junction to lead RthJL 750 K/W OUTPUT Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE 6.8 pF Collector emitter leakage current VCE = 24 V ICEO 10 100 nA TA = 85 °C, VCE = 24 V ICEO 250 μA Thermal resistance, junction to lead RthJL 500 K/W |
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