ILD620, ILD620GB, ILQ620, ILQ620GB

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Vishay Semiconductors

Rev. 1.8, 12-Apr-13

2

Document Number: 83653

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

hole devices (DIP).

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

INPUT

Forward current

± 60

mA

Surge current

± 1.5

A

Power dissipation

100

mW

Derate linearly from 25 °C

1.3

mW/°C

OUTPUT

Collector emitter breakdown voltage

70

V

Collector current

50

mA

t < 1 s

100

mA

Power dissipation

150

mW

Derate from 25 °C

2mW/°C

COUPLER

Isolation test voltage

t = 1 s

5300

Isolation voltage

890

Total power dissipation

250

mW

Package dissipation

ILD620

400

mW

ILD620GB

400

mW

Derate from 25 °C

5.33

mW/°C

Package dissipation

ILQ620

500

mW

ILQ620GB

500

mW

Derate from 25 °C

6.67

mW/°C

Creepage distance

 7mm

Clearance distance

 7mm

Isolation resistance





Storage temperature

- 55 to + 150

°C

Operating temperature

- 55 to + 100

°C

Junction temperature

100

°C

2 mm from case bottom

260

°C

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

1

1.15

1.3

V

Forward current

2.5

20

μA

Capacitance

25

pF

Thermal resistance, junction to lead

750

K/W

OUTPUT

Collector emitter capacitance

6.8

pF

Collector emitter leakage current

10

100

nA

250

μA

Thermal resistance, junction to lead

500

K/W