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BPW34-BS Datasheet(PDF) 2 Page - OSRAM GmbH

Part No. BPW34-BS
Description  Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit; in SMT Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT
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Maker  OSRAM [OSRAM GmbH]
Homepage  http://www.osram.com
Logo OSRAM - OSRAM GmbH

BPW34-BS Datasheet(HTML) 2 Page - OSRAM GmbH

  BPW34-BS Datasheet HTML 1Page - OSRAM GmbH BPW34-BS Datasheet HTML 2Page - OSRAM GmbH BPW34-BS Datasheet HTML 3Page - OSRAM GmbH BPW34-BS Datasheet HTML 4Page - OSRAM GmbH BPW34-BS Datasheet HTML 5Page - OSRAM GmbH BPW34-BS Datasheet HTML 6Page - OSRAM GmbH  
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2002-01-24
2
BPW34B, BPW 34BS
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
T
op; Tstg
– 40 … + 85
°C
Sperrspannung
Reverse voltage
V
R
32
V
Verlustleistung,
T
A = 25 °C
Total power dissipation
P
tot
150
mW
Kennwerte (
T
A = 25 °C, Normlicht A, T = 2856 K)
Characteristics (
T
A = 25 °C, standard light A, T = 2856 K)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Fotoempfindlichkeit,
V
R = 5 V
Spectral sensitivity
S
75
nA/Ix
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λ
S max
850
nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von S
max
Spectral range of sensitivity
S = 10% of S
max
λ
350 … 1100
nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area
A
7.45
mm
2
Abmessung der bestrahlungsempfindlichen Fläche
Dimensions of radiant sensitive area
L
× B
L
× W
2.73
× 2.73
mm
× mm
Halbwinkel
Half angle
ϕ± 60
Grad
deg.
Dunkelstrom,
V
R = 10 V
Dark current
I
R
2 (
≤ 30)
nA
Spektrale Fotoempfindlichkeit,
λ = 400 nm
Spectral sensitivity
Sλ
0.2
A/W
Quantenausbeute,
λ = 400 nm
Quantum yield
η
0.62
Electrons
Photon
Leerlaufspannung,
E
v = 1000 Ix
Open-circuit voltage
V
O
390
mV


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