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BCW65 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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BCW65 Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers |
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1 / 2 page  SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - AUGUST 1995 PARTMARKING DETAILS BCW65A EA BCW65AR 4V BCW65B EB BCW65BR 5V BCW65C EC BCW65CR 6V BCW66F EF BCW66FR 7P BCW66G EG BCW66GR 5T BCW66H EH BCW66HR 7M COMPLEMENTARY TYPES BCW65 BCW67 BCW66 BCW68 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCW65 BCW66 UNIT Collector-Base Voltage VCBO 60 75 V Collector-Emitter Voltage VCEO 32 45 V Emitter-Base Voltage VEBO 5V Continuous Collector Current IC 800 mA Peak Collector Current(10ms) ICM 1000 mA Base Current IB 100 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C BCW65 BCW66 ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage BCW65 BCW66 V(BR)CEO 32 45 VICEO=10mA ICEO=10mA BCW65 BCW66 V(BR)CES 60 75 V IC=10µA IC=10µA Emitter-Base Breakdown Voltage V(BR)EBO 5V IEBO=10µA Collector-Emitter Cut-off Current BCW65 BCW66 ICES 20 20 20 20 nA µ A nA µ A VCES= 32V VCES= 32V,Tamb=150oC VCES= 45V VCES= 45V ,Tamb=150oC Emitter-Base Cut-Off Current IEBO 20 nA VEBO=4V Collector-Emitter Saturation Voltage VCE(sat) 0.3 0.7 V V IC=100mA, IB=10mA IC=500mA, IB=50mA* Base-Emitter Saturation Voltage VBE(SAT) 2 V IC=500mA, IB=50mA* Static Forward Current Transfer BCW65A BCW66F hFE 35 75 100 35 160 250 IC=100µA, VCE=10V IC= 10mA, VCE= 1V IC=100mA, VCE= 1V* IC=500mA, VCE= 2V* BCW65B BCW66G hFE 50 110 160 60 250 400 IC=100µA, VCE=10V IC= 10mA, VCE= 1V IC=100mA, VCE= 1V* IC=500mA, VCE= 2V* BCW65C BCW66H hFE 80 180 250 100 350 630 IC=100µA, VCE=10V IC= 10mA, VCE= 1V IC=100mA, VCE= 1V* IC=500mA, VCE= 2V* Transition Frequency fT 100 MHz IC =20mA, VCE=10V f = 100MHz Collector-Base Capacitance Ccbo 8 12 pF VCBO=10V, f =1MHz Emitter-Base Capacitance Cebo 80 pF VEBO=0.5V, f =1MHz Noise Figure N 2 10 dB IC= 0.2mA, VCE= 5V RG =1kΩ Switching times: Turn-On Time Turn-Off Time ton toff 100 400 ns ns IC=150mA IB1=- IB2=15mA RL=150Ω Spice parameter data is available upon request for this device *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% C B E SOT23 BCW65 BCW66 3 - 28 3 - 27 |
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