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2N5634 Datasheet(PDF) 1 Page - Savantic, Inc. |
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2N5634 Datasheet(HTML) 1 Page - Savantic, Inc. |
1 / 3 page SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5632 2N5633 2N5634 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5632 100 2N5633 120 VCBO Collector-base voltage 2N5634 Open emitter 140 V 2N5632 100 2N5633 120 VCEO Collector-emitter voltage 2N5634 Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A PD Total Power Dissipation TC=25 150 W Tj Junction temperature 150 Tstg Storage temperature -65~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.1 /W Fig.1 simplified outline (TO-3) and symbol |
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