10

®

INA104

GENERAL RECOMMENDED HANDLING

PROCEDURES FOR INTEGRATED CIRCUITS

All semiconductor devices are vulnerable, in varying de-

grees, to damage from the discharge of electrostatic energy.

Such damaging can cause performance degradation or fail-

ure, either immediate or latent. As a general practice, we

recommend the following handling procedures to reduce the

risk of electrostatic damage.

1. Remove static-generating materials, such as untested plas-

tics, from all areas that handle microcircuits.

FIGURE 8. Amplification of a Differential Voltage From a Resistance Bridge.

FIGURE 9. Amplification of a Transformer Coupled Analog Signal.

3

6

8

13

15

16

17

18

14

5

1

2

INA104

R

G

E

OUT

+V

CC

–V

CC

E

Optional Offset Adjust 100k

Ω

Shield

∆E

IN

R

V

R

RR

E

1

E

2

Transducer

or Sensor

Resistance

Bridge

+

–

–In

+In

3

6

7

10

11

8

13

9

17

18

14

5

1

2

INA104

R

G

E

OUT1

E

OUT2

+V

CC

–V

CC

Shield

E

2

E

1

Transducer or

Analog Signal

Transformer

Noise

(60Hz Hum)

Noise

(60Hz Hum)

–In

+In

(1)

NOTE: (1) Guard drive could be used

to improve circuit AC CMR. See Figure 5.

2. Ground all operators, equipment, and work stations.

3. Transport and ship microcircuits, or products incorporat-

ing microcircuits, in static-free, shielded containers.

4. Connect together all leads of each device by means of a

conductive material, when the device is not connected

into a circuit.

5. Control relative humidity to as high a value as practical

(50% is recommended).