PSND50E02 datasheet(1/1 Pages) MEDER

Part #	PSND50E02

Description	Electrically Isolated Back Surface Single MOSFET Die

Download	1 Pages

Scroll/Zoom	100%

Manufacturer	MEDER [Meder Electronic]

Direct Link	http://www.meder.com

Logo

1 / 1 page

POWERSEM GmbH, Walpersdorfer Str. 56

91126 D- Schwabach

Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20

 2003 POWERSEM reserves the right to change limits, test conditions and dimensions

Fast Recovery

PSND 50E

IFAV

=

50 A

Epitaxial Diode

VRRM

= 200-600 V

(FRED) Module

Preliminary Data Sheet

VRSM

V

VRRM

V

Type

200

PSND 50E/02

400

PSND 50E/04

600

PSND 50E/06

Symbol Test Conditions

Maximum Ratings

IFAV

TC = 85°C

50

A

IFSM

TVJ = 45°C

t = 10 ms

(50 Hz), sine

800

A

VR = 0

t = 8.3 ms (60 Hz), sine

880

A

TVJ = TVJM

t = 10 ms

(50 Hz), sine

720

A

VR = 0

t = 8.3 ms (60 Hz), sine

790

A

∫ i2 dt

TVJ = 45°C

t = 10 ms

(50 Hz), sine

3200

A

2 s

VR = 0

t = 8.3 ms (60 Hz), sine

3210

A

2 s

TVJ = TVJM

t = 10 ms

(50 Hz), sine

2590

A

2 s

VR = 0

t = 8.3 ms (60 Hz), sine

2590

A

2 s

TVJ

-40 ... + 150

°C

TVJM

150

°C

Tstg

-40 ... + 125

°C

VISOL

50/60 HZ, RMS

t = 1 min

2500

V

∼

IISOL ≤ 1 mA

t = 1 s

3000

V

∼

Md

Mounting torque

(M5)

5

Nm

Terminal connection torque

(M5)

5

Nm

Weight

typ.

160

g

Symbol Test Conditions

Characteristic Value

IR

VR = VRRM

TVJ = 25°C

≤

150

µA

VR = VRRM

TVJ = TVJM

≤

15

mA

VF

IF = 50 A

TVJ = 25°C

≤

1.25

V

trr

TVJ = 25°C, IF = 1A;

-di/dt = 100 A/µs; VR = 30V

typ. 60

ns

VTO

For power-loss calculations only

1.1

V

rT

TVJ = TVJM

2.6

m

Ω

RthJC

per diode; DC current

0.9

K/W

per module

0.45

K/W

RthJK

per diode; DC current

1.1

K/W

per module

0.55

K/W

dS

Creeping distance on surface

10

mm

dA

Creeping distance in air

9.4

mm

a

Max. allowable acceleration

50

m/s

2

Features

• Package with screw terminals

• Isolation voltage 3000 V∼

• Planar glasspassivated chips

• Short recovery time

• Low forward voltage drop

• Short recovery behaviour

• UL registered, E 148688

Applications

• Inductive heating and melting

• Free wheeling diode in converters

and motor control circuits

• Uninterruptible power supplies

(UPS)

• Ultrasonic cleaners and welders

Advantages

• High reliability circuit operation

• Low voltage peaks for reduced

protection circuits

• Low noise switching

• Low losses

Package, style and outline

Dimensions in mm (1mm = 0.0394“)

Similar Part No. - PSND50E02

Manufacturer	Part #	Datasheet	Description
Meder Electronic	PSND50E08	119Kb / 1P	Fast Recovery Epitaxial Diode Module

More results

Similar Description - PSND50E02

Manufacturer	Part #	Datasheet	Description
Meder Electronic	PSMG5005	149Kb / 4P	Electrically Isolated Back Surface Single MOSFET Die
	PSND30E12	125Kb / 1P	Electrically Isolated Back Surface Single MOSFET Die
	PSND30E06	120Kb / 1P	Electrically Isolated Back Surface Single MOSFET Die
IXYS Corporation	IXKC15N60C5	119Kb / 4P	Electrically isolated back surface Electrically isolated back surface
	IXGC16N60B2	92Kb / 2P	Electrically Isolated Back Surface
	DSS20-01AC	121Kb / 4P	Electrically Isolated Back Surface
	IXFR38N80Q2	568Kb / 5P	Electrically Isolated Back Surface
	DSEE8-06CC	65Kb / 2P	Electrically Isolated Back Surface
	IXUC100N055	575Kb / 2P	Electrically Isolated Back Surface
	IXGC16N60C2	541Kb / 2P	Electrically Isolated Back Surface

More results

PSND50E02 Datasheet(PDF) 1 Page - Meder Electronic

PSND50E02 Datasheet(HTML) 1 Page - Meder Electronic

Similar Part No. - PSND50E02

Similar Description - PSND50E02

Html Pages

1

Datasheet Download

Link URL