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CSD13202Q2 Datasheet(PDF) 1 Page - Texas Instruments

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Part No. CSD13202Q2
Description  12V N-Channel NexFET Power MOSFETs
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Maker  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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CSD13202Q2 Datasheet(HTML) 1 Page - Texas Instruments

 
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VGS - Gate-to- Source Voltage (V)
TC = 25°C,I D = 5A
TC = 125°C,I D = 5A
G001
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Qg - Gate Charge (nC)
ID = 5A
VDS =6V
G001
1
D
2
D
D
3
D
4
D
5
G
6
S
S
P0108-01
CSD13202Q2
www.ti.com
SLPS313 – SEPTEMBER 2013
12V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD13202Q2
1
FEATURES
PRODUCT SUMMARY
2
Ultralow Qg and Qgd
VDS
Drain to Source Voltage
12
V
Low Thermal Resistance
Qg
Gate Charge Total (4.5V)
5.1
nC
Avalanche Rated
Qgd
Gate Charge Gate to Drain
0.76
nC
VGS = 2.5V
9.1
m
Pb Free Terminal Plating
RDS(on)
Drain to Source On Resistance
VGS = 4.5V
7.5
m
RoHS Compliant
VGS(th)
Threshold Voltage
0.8
V
Halogen Free
SON 2-mm × 2-mm Plastic Package
ORDERING INFORMATION
Device
Package
Media
Qty
Ship
APPLICATIONS
SON 2-mm × 2-mm
7-Inch
Tape and
CSD13202Q2
3000
Plastic Package
Reel
Reel
Optimized for Load Switch Applications
Storage, Tablets, and Handheld Devices
ABSOLUTE MAXIMUM RATINGS
Optimized for Control FET Applications
TA = 25°C unless otherwise stated
VALUE
UNIT
Point of Load Synchronous Buck Converters
VDS
Drain to Source Voltage
12
V
VGS
Gate to Source Voltage
±8
V
DESCRIPTION
Continuous Drain Current (Package Limit)
22
A
ID
This 12V, 7.5m
Ω NexFET™ power MOSFET has
Continuous Drain Current(1)
14.4
A
been
designed
to
minimize
losses
in
power
IDM
Pulsed Drain Current, TA = 25°C
(2)
76
A
conversion and load management applications. The
PD
Power Dissipation(1)
2.7
W
SON 2 x 2 offers excellent thermal performance for
TJ,
Operating Junction and Storage
the size of the package.
–55 to 150
°C
TSTG
Temperature Range
Avalanche Energy, single pulse
Top View
EAS
20
mJ
ID = 20A, L = 0.1mH, RG = 25Ω
(1) RθJA = 45°C/W on 1in² Cu (2 oz.) on .060" thick FR4 PCB.
(2) Pulse duration 10
μs, duty cycle ≤2%
RDS(on) vs VGS
GATE CHARGE
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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