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CSD13202Q2 Datasheet(PDF) 4 Page - Texas Instruments

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Part No. CSD13202Q2
Description  12V N-Channel NexFET Power MOSFETs
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Maker  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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CSD13202Q2 Datasheet(HTML) 4 Page - Texas Instruments

 
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background image
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
VGS = 2.5V
VGS = 4.5V
ID =5A
G001
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
ID = 250uA
G001
0
2
4
6
8
10
12
14
16
18
0
1
2
3
4
5
6
7
8
VGS - Gate-to- Source Voltage (V)
TC = 25°C,I D = 5A
TC = 125°C,I D = 5A
G001
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Qg - Gate Charge (nC)
ID = 5A
VDS =6V
G001
10
100
1000
10000
0
2
4
6
8
10
12
VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
CSD13202Q2
SLPS313 – SEPTEMBER 2013
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 4. Gate Charge
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 6. Threshold Voltage vs. Temperature
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 8. Normalized On-State Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
4
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Copyright © 2013, Texas Instruments Incorporated
Product Folder Links: CSD13202Q2


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