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CSD13202Q2 Datasheet(PDF) 2 Page - Texas Instruments

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Part No. CSD13202Q2
Description  12V N-Channel NexFET Power MOSFETs
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Maker  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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CSD13202Q2 Datasheet(HTML) 2 Page - Texas Instruments

 
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CSD13202Q2
SLPS313 – SEPTEMBER 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise specified
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, ID = 250μA
12
V
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = 9.6V
1
μA
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = 8V
100
nA
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, IDS = 250μA
0.58
0.80
1.10
V
VGS = 2.5V, IDS = 5A
9.1
11.6
m
RDS(on)
Drain to Source On Resistance
VGS = 3V, IDS = 5A
8.4
10.4
m
VGS = 4.5V, IDS = 5A
7.5
9.3
m
gfs
Transconductance
VDS = 6V, IDS = 5A
44
S
Dynamic Characteristics
CISS
Input Capacitance
767
997
pF
COSS
Output Capacitance
VGS = 0V, VDS = 6V, f = 1MHz
506
657
pF
CRSS
Reverse Transfer Capacitance
43
56
pF
Rg
Series Gate Resistance
0.7
1.4
Qg
Gate Charge Total (4.5V)
5.1
6.6
nC
Qgd
Gate Charge – Gate to Drain
0.76
nC
VDS = 6V, IDS = 5A
Qgs
Gate Charge Gate to Source
0.98
nC
Qg(th)
Gate Charge at Vth
0.57
nC
QOSS
Output Charge
VDS = 6V, VGS = 0V
5.7
nC
td(on)
Turn On Delay Time
4.5
ns
tr
Rise Time
28
ns
VDS = 6V, VGS = 4.5V, IDS = 5A
RG = 2Ω
td(off)
Turn Off Delay Time
11.0
ns
tf
Fall Time
13.6
ns
Diode Characteristics
VSD
Diode Forward Voltage
IDS = 5A, VGS = 0V
0.75
1
V
Qrr
Reverse Recovery Charge
13
nC
VDD = 6V, IF = 5A, di/dt = 200A/μs
trr
Reverse Recovery Time
28
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Thermal Resistance Junction to Case(1)
6.4
°C/W
RθJA
Thermal Resistance Junction to Ambient(1)(2)
60
°C/W
(1)
RθJC is determined with the device mounted on a 1-inch
2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2)
Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
2
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Copyright © 2013, Texas Instruments Incorporated
Product Folder Links: CSD13202Q2


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