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PBSS4032SN Datasheet(PDF) 3 Page - NXP Semiconductors

Part # PBSS4032SN
Description  30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PBSS4032SN Datasheet(HTML) 3 Page - NXP Semiconductors

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PBSS4032SN
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 13 October 2010
3 of 15
NXP Semiconductors
PBSS4032SN
30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -0.86
W
[2] -1.4
W
[3] -2.3
W
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curves
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Tamb (°C)
−75
175
125
25
75
−25
006aac278
1.0
2.0
3.0
Ptot
(W)
0.0
(1)
(3)
(2)


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