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CSD88537ND Datasheet(PDF) 5 Page - Texas Instruments |
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CSD88537ND Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 13 page  0 3 6 9 12 15 18 21 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature (ºC) G001 0.1 1 10 100 1000 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 10us 100us 1ms 10ms DC Single Pulse Max RthetaJL = 20ºC/W G001 10 100 0.01 0.1 1 TAV - Time in Avalanche (mS) TC = 25ºC TC = 125ºC G001 CSD88537ND www.ti.com SLPS455 – JANUARY 2014 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching TEXT ADDED FOR SPACING Figure 12. Maximum Drain Current vs Temperature Copyright © 2014, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: CSD88537ND |
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