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CSD19505KCS Datasheet(PDF) 4 Page - Texas Instruments

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Part # CSD19505KCS
Description  CSD19505KCS, 80 V N-Channel NexFET Power MOSFETs
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

CSD19505KCS Datasheet(HTML) 4 Page - Texas Instruments

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−75 −50 −25
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TC - Case Temperature (ºC)
VGS = 6V
VGS = 10V
ID = 100A
G001
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VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
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TC - Case Temperature (ºC)
ID = 250uA
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VGS - Gate-to- Source Voltage (V)
TC = 25°C,I D = 100A
TC = 125°C,I D = 100A
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Qg - Gate Charge (nC)
ID = 100A
VDS = 40V
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VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
CSD19505KCS
SLPS480 – JANUARY 2014
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 4. Gate Charge
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
4
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