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PS431815 Datasheet(PDF) 3 Page - Powerex Power Semiconductors |
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PS431815 Datasheet(HTML) 3 Page - Powerex Power Semiconductors |
3 / 5 page Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 POW-R-BLOK TM www.pwrx.com Single SCR Isolated Module 1500 Amperes / Up to 1800 Volts Revision Date: 05/29/2012 PS43__15 ® Electrical Characteristics, TJ=25C unless otherwise specified Characteristics Symbol Test Conditions Min. Max. Units Repetitive Peak Forward Leakage Current IDRM Up to 1800V, TJ=125C 200 mA Repetitive Peak Reverse Leakage Current IRRM Up to 1800V, TJ=125C 200 mA Peak On-State Voltage VTM ITM=3000A, TJ=25C 1.30 V Threshold Voltage, Low-level Slope Resistance, Low-level V(TO)1 rT1 TJ = 125C, I = 15%IT(AV) to πIT(AV) 0.691 0.102 V mΩ Threshold Voltage, High-level Slope Resistance, High-level V(TO)2 rT2 TJ = 125C, I = πIT(AV) to ITSM 0.871 0.065 V mΩ VTM Coefficients, Full Range TJ = 125C, I = 50A to 15kA VTM = A+ B Ln I +C I + D Sqrt I A = B = C = D = 0.7963 -3.77 E-02 3.65 E-05 7.19 E-03 Critical Rate of Rise of Off-State Voltage dV/dt Exponential to 0.67VDRM Tj=125C, Gate Open 600 V/ s Gate Trigger Current IGT IG Required Tj=25C, VD=12V Min Ig Required to Ensure Turn-On of Paralleled SCRs in Module 800mA 400 mA Gate Trigger Voltage VGT Tj=25C, VD=12V 4.5 Volts Non-Triggering Gate Voltage VGDM Tj=125C, VD= ½ VDRM 0.15 Volts Holding Current IH 600 mA Peak Forward Gate Current IGTM 8.0 Amp Peak Reverse Gate Voltage VGRM 5 Volts Maximum Average Gate Power Dissipation PGM (AVE) 60 Watts Thermal Characteristics Characteristics Symbol Max. Units Thermal Resistance, Junction to Case RΘJ-C Per Module, both conducting 0.024 C/W Thermal Impedance Coefficients ZΘJ-C ZΘJ-C= K1 (1-exp(-t/t1)) + K2 (1-exp(-t/t2)) + K3 (1-exp(-t/t3)) + K4 (1-exp(-t/t4)) K1 = 4.05 E-04 K2 = 5.19 E-03 K3 = 1.63 E-02 K4 = 2.12 E-03 t1 = 6.24 E-03 t2 = 2.46 E-01 t3 = 8.20 t4 = 35.33 Thermal Resistance, Case to Sink Lubricated RΘC-S Per Module 0.009 C/W |
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