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SMK1625D2-1 Datasheet(PDF) 2 Page - KODENSHI_AUK CORP. |
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SMK1625D2-1 Datasheet(HTML) 2 Page - KODENSHI_AUK CORP. |
2 / 8 page KSD-T6S006-000 2 SMK1625D2 Electrical Characteristics (T C=25C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250uA, VGS=0 250 - - V Gate threshold voltage VGS(th) ID=250uA, VDS=VGS 2.0 - 4.0 V Drain-source cut-off current IDSS VDS=250V, VGS=0V - - 1 uA Gate leakage current IGSS VDS=0V, VGS=30V - - 100 nA Drain-source on-resistance RDS(ON) VGS=10V, ID=8.0A - 0.22 0.27 Forward transfer conductance gfs VDS=10V, ID=8.0A - 10.5 - S Input capacitance Ciss VGS=0V, VDS=25V f=1MHz - 968 1275 pF Output capacitance Coss - 204 278 Reverse transfer capacitance Crss - 49 64 Turn-on delay time td(on) VDD=125V, ID=16A RG=25 - 15 - ns Rise time tr - 130 - Turn-off delay time td(off) - 135 - Fall time tf - 105 - Total gate charge Qg VDS=200V, VGS=10V ID=16A - 22 28 nC Gate-source charge Qgs - 7.1 - Gate-drain charge Qgd - 5.9 - Source-Drain Diode Ratings and Characteristics (T C=25C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Source current IS Integral reverse diode in the MOSFET - - 16 A Source current (Pulsed) ISM - - 64 Forward voltage VSD VGS=0V, IS=16A - - 1.4 V Reverse recovery time trr IS=16A, VGS=0 dIF/dt=100A/us - 208 - ns Reverse recovery charge Qrr - 1.63 - uC Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=3.0mH, IAS=16A, VDD=50V, RG=25Ω ③ Pulse Test : Pulse Width≤ 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature |
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