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SMK1265F Datasheet(PDF) 2 Page - KODENSHI_AUK CORP. |
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SMK1265F Datasheet(HTML) 2 Page - KODENSHI_AUK CORP. |
2 / 8 page KSD-T0O039-003 2 SMK1265F Electrical Characteristics (T C=25C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250uA, VGS=0V 650 - - V Gate threshold voltage VGS(th) ID=250uA, VDS=VGS 2.0 - 4.0 V Drain-source cut-off current IDSS VDS=650V, VGS=0V - - 1 uA Gate leakage current IGSS VDS=0V, VGS=30V - - 100 nA Drain-source on-resistance ④ RDS(on) VGS=10V, ID=6.0A - 0.68 0.80 Forward transfer conductance ④ gfs VDS=10V, ID=6.0A - 10 - S Input capacitance Ciss VGS=0V, VDS=25V f=1 MHz - 2162 2882 pF Output capacitance Coss - 183 244 Reverse transfer capacitance Crss - 14.6 19.4 Turn-on delay time td(on) VDD=300V, ID=12A RG=25Ω ③④ - 30 - ns Rise time tr - 85 - Turn-off delay time td(off) - 140 - Fall time tf - 90 - Total gate charge Qg VDS=520V, VGS=10V ID=12A ③④ - 43 65 nC Gate-source charge Qgs - 13 - Gate-drain charge Qgd - 10.5 - Source-Drain Diode Ratings and Characteristics (T C=25C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Source current (DC) IS Integral reverse diode in the MOSFET - - 12 A Source current (Pulsed) ① ISM - - 48 Forward voltage ④ VSD VGS=0V, IS=12A - - 1.4 V Reverse recovery time trr IS=12A, VGS=0V dIF/dt=100A/us - 500 - ns Reverse recovery charge Qrr - 4.3 - uC Note ; ① Repetitive rating : Pulse width limited by maximum junction temperature ② L=1.8mH, IAS=12A, VDD=50V, RG=25Ω, Starting TJ=25℃ ③ Pulse Test : Pulse width≤300us, Duty cycle≤2% ④ Essentially independent of operating temperature |
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