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NX3008PBKW Datasheet(PDF) 4 Page - NXP Semiconductors |
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NX3008PBKW Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 16 page NX3008PBKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 1 August 2011 4 of 16 NXP Semiconductors NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET Fig 1. Normalized total power dissipation as a function of junction temperature Fig 2. Normalized continuous drain current as a function of junction temperature IDM is a single pulse (1) tp = 1 ms (2) tp = 10 ms (3) tp = 100 ms (4) DC; Tsp = 25 °C (5) DC; Tamb = 25 °C; 1 cm2 drain mounting pad Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage Tj (°C) -75 175 125 25 75 -25 001aao121 40 80 120 Pder (%) 0 Tj (°C) -75 175 125 25 75 -25 001aao122 40 80 120 Ider (%) 0 001aao248 VDS (V) -10-1 -102 -10 -1 -1 -10-1 -10 lD (A) -10-2 (1) (2) (3) (4) (5) |
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