KSD-T0O043-002

2

SMK630F

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

200

-

-

V

Gate threshold voltage

2.0

-

4.0

V

Drain-source cut-off current

-

-

1

uA

Gate leakage current

-

-

100

nA

Drain-source on-resistance

④

-

0.34

0.40



Forward transfer conductance

④

-

5.5

-

S

Input capacitance

Ciss

f=1MHz

-

420

525

pF

Output capacitance

Coss

-

99

128

Reverse transfer capacitance

Crss

-

24

28

Turn-on delay time

-

11

-

ns

Rise time

-

92

-

Turn-off delay time

-

70

-

Fall time

-

72

-

Total gate charge

-

12

17

nC

Gate-source charge

-

2.4

-

Gate-drain charge

-

3.5

-

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Source current (DC)

Integral reverse diode

in the MOSFET

-

-

9

A

Source current (Pulsed)

①

-

-

36

Forward voltage

④

-

-

1.4

V

Reverse recovery time

-

158

-

ns

Reverse recovery charge

-

0.97

-

uC

Note ;

①

Repetitive rating : Pulse width limited by maximum junction temperature

②

③

Pulse Test : Pulse width≤300us, Duty cycle≤2%

④

Essentially independent of operating temperature