KSD-T6Q006-002

2

SMK0460I

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

600

-

-

V

Gate-threshold voltage

2.0

-

4.0

V

Drain-source leakage current

-

-

1

A

Gate-source leakage

-

-

100

nA

Drain-Source on-resistance

④

-

2.1

2.5



Forward transfer admittance

④

-

4.0

-

S

Input capacitance

Ciss

-

670

848

pF

Output capacitance

Coss

-

57

71

Reverse transfer capacitance

Crss

-

9.8

12.2

Turn-on delay time

-

10

-

ns

Rise time

-

42

-

Turn-off delay time

-

38

-

Fall time

-

46

-

Total gate charge

-

12

15

Gate-source charge

-

4

-

nC

Gate-drain charge

-

3

-

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

Continuous source current

Integral reverse diode

in the MOSFET

-

-

4

A

Source current (Pulsed)

①

-

-

16

Forward voltage

④

-

-

1.4

V

Reverse recovery time

-

300

-

ns

Reverse recovery charge

-

2.2

-

uC

Note ;

① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

② L=25.9mH, I

③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%

④ Essentially independent of operating temperature