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OP292GS-REEL Datasheet(PDF) 4 Page - Analog Devices |
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OP292GS-REEL Datasheet(HTML) 4 Page - Analog Devices |
4 / 20 page OP292/OP492 Rev. C | Page 4 of 20 Parameter Symbol Conditions Min Typ Max Unit DYNAMIC PERFORMANCE Slew Rate SR RL = 10 kΩ 3 V/μs −40°C ≤ TA ≤ +125°C 1 2 V/μs Gain Bandwidth Product GBP 4 MHz Phase Margin φm 75 Degrees Channel Separation CS fO = 1 kHz 100 dB NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 25 μV p-p Voltage Noise Density en f = 1 kHz 15 nV/√Hz Current Noise Density in 0.7 pA/√Hz 1 Long-term offset voltage drift is guaranteed by 1,000 hours life test performed on three independent wafer lots at 125°C with LTPD of 1.3. VS =±15 V, VCM = 0 V, VO = 2 V, TA = 25°C, unless otherwise noted. Table 2. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage OP292 VOS 1.0 2.0 mV −40°C ≤ TA ≤ +85°C 1.2 2.5 mV −40°C ≤ TA ≤ +125°C 1.5 3 mV OP492 VOS 1.4 2.5 mV −40°C ≤ TA ≤ +85°C 1.7 2.8 mV −40°C ≤ TA ≤ +125°C 2 3 mV Input Bias Current IB 375 700 nA −40°C ≤ TA ≤ +125°C 0.5 1 μA Input Offset Current IOS 7 50 nA −40°C ≤ TA ≤ +85°C 20 100 nA −40°C ≤ TA ≤ +125°C 0.4 1.2 μA Input Voltage Range1 −11 +11 V Common-Mode Rejection Ratio CMRR VCM = ±11 V 78 100 dB −40°C ≤ TA ≤ +125°C 75 95 dB Large Signal Voltage Gain AVO RL = 10 kΩ, VO =±10 V 25 120 V/mV −40°C ≤ TA ≤ +85°C 10 75 V/mV −40°C ≤ TA ≤ +125°C 5 60 V/mV Offset Voltage Drift ΔVOS/ΔT −40°C ≤ TA ≤ +125°C 4 10 μV/°C Bias Current Drift ΔIB/ΔT −40°C ≤ TA ≤ +125°C 3 pA/°C OUTPUT CHARACTERISTICS Output Voltage Swing VO RL = 2 kΩ to GND ±11 ±12.2 V −40°C ≤ TA ≤ +125°C ±10 ±11 V RL = 100 kΩ to GND ±13.8 ±14.3 V −40°C ≤ TA ≤ +125°C ±13.5 ±14.0 mV Short-Circuit Current Limit ISC Short circuit to GND 8 10.5 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±2.25 V to ±15 V 75 86 dB −40°C ≤ TA ≤ +125°C 70 83 dB Supply Current Per Amp ISY VO = 0 V 1 1.4 mA |
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