CY62256N

Document Number: 001-06511 Rev. *F

Page 5 of 16

Thermal Resistance

Parameter[6]

Description

Test Conditions

DIP

SOIC

TSOP

RTSOP

Unit

θ

JA

Thermal resistance

(junction to ambient)

Still air, soldered on a 4.25 × 1.125

inch, 4-layer printed circuit board

75.61

76.56

93.89

93.89

°C/W

θ

JC

Thermal resistance

(junction to case)

43.12

36.07

24.64

24.64

°C/W

Figure 3. AC Test Loads and Waveforms

Data Retention Characteristics

Parameter

Description

Conditions[7]

Min

Typ[8]

Max

Unit

2.0

–

–

V

Data retention current

LL – Commercial

–0.1

5

μA

LL – Industrial/

Automotive-A

–0.1

10

μA

LL – Automotive-E

–

0.1

10

μA

[7]

Chip deselect to data retention time

0

–

–

ns

[7]

Operation recovery time

CY62256NLL-55

55

–

–

ns

CY62256NLL-70

70

–

–

≤

3.0 V

5 V

OUTPUT

R1 1800

Ω

R2

990

Ω

100 pF

INCLUDING

JIG AND

SCOPE

GND

90%

10%

90%

10%

5ns

<5 ns

5 V

OUTPUT

R1 1800

Ω

R2

990

Ω

5pF

INCLUDING

JIG AND

SCOPE

(a)

(b)

OUTPUT

1.77 V

Equivalent to:

THÉVENIN EQUIVALENT

ALL INPUT PULSES

639

Ω

Notes

6. Tested initially and after any design or process changes that may affect these parameters.

8. Typical specifications are the mean values measured over a large sample size across normal production process variations and are taken at nominal conditions

Figure 4. Data Retention Waveform

≥

3.0 V

3.0 V

2 V

DATA RETENTION MODE

CE