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CY14B104LA-BA25XI Datasheet(PDF) 8 Page - Cypress Semiconductor

Part # CY14B104LA-BA25XI
Description  4-Mbit (512 K x 8/256 K x 16) nvSRAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY14B104LA-BA25XI Datasheet(HTML) 8 Page - Cypress Semiconductor

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CY14B104LA, CY14B104NA
Document Number: 001-49918 Rev. *M
Page 8 of 26
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................–65
C to +150 C
Maximum accumulated storage time
At 150
C ambient temperature .......................1000 h
At 85
C ambient temperature ......................20 Years
Maximum junction temperature ..................................150
C
Supply voltage on VCC relative to VSS .......... –0.5 V to 4.1 V
Voltage applied to outputs
in high Z state ..................................... –0.5 V to VCC + 0.5 V
Input voltage ........................................ –0.5 V to Vcc + 0.5 V
Transient voltage (< 20 ns) on
any pin to ground potential ................. –2.0 V to VCC + 2.0 V
Package power dissipation
capability (TA = 25 °C) ..................................................1.0 W
Surface mount Pb soldering
temperature (3 Seconds) .........................................+260
C
DC output current (1 output at a time, 1s duration) .....15 mA
Static discharge voltage
(per MIL-STD-883, Method 3015) .......................... > 2001 V
Latch up current .................................................... > 200 mA
Operating Range
Range
Ambient Temperature
VCC
Industrial
–40
C to +85 C
2.7 V to 3.6 V
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
Min
Typ [15]
Max
Unit
VCC
Power supply
2.7
3.0
3.6
V
ICC1
Average VCC current
tRC = 20 ns
tRC = 25 ns
tRC = 45 ns
Values obtained without output loads
(IOUT = 0 mA)
––
70
70
52
mA
mA
mA
ICC2
Average VCC current during
STORE
All inputs don’t care, VCC = Max
Average current for duration tSTORE
––
10
mA
ICC3
Average VCC current at
tRC= 200 ns, VCC(Typ), 25 °C
All inputs cycling at CMOS levels.
Values obtained without output loads
(IOUT = 0 mA).
–35
mA
ICC4
Average VCAP current during
AutoStore cycle
All inputs don’t care. Average current for
duration tSTORE
––5
mA
ISB
VCC standby current
CE > (VCC – 0.2 V).
VIN < 0.2 V or > (VCC – 0.2 V).
Standby current level after non-volatile
cycle is complete.
Inputs are static. f = 0 MHz.
––5
mA
IIX[16]
Input leakage current (except
HSB)
VCC = Max, VSS < VIN < VCC
–1
+1
A
Input leakage current (for HSB)VCC = Max, VSS < VIN < VCC
–100
+1
A
IOZ
Off-state output leakage current VCC = Max, VSS < VOUT < VCC,
CE or OE > VIH or
BHE/BLE > VIH or WE < VIL
–1
+1
A
VIH
Input HIGH voltage
2.0
VCC + 0.5
V
VIL
Input LOW voltage
Vss – 0.5
0.8
V
VOH
Output HIGH voltage
IOUT = –2 mA
2.4
V
VOL
Output LOW voltage
IOUT = 4 mA
0.4
V
Notes
15. Typical values are at 25 °C, VCC = VCC(Typ). Not 100% tested.
16. The HSB pin has IOUT = –2 µA for VOH of 2.4 V when both active HIGH and LOW drivers are disabled. When they are enabled standard VOH and VOL are valid. This
parameter is characterized but not tested.


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