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CL31B225KBH4PNE Datasheet(PDF) 2 Page - Samsung semiconductor |
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CL31B225KBH4PNE Datasheet(HTML) 2 Page - Samsung semiconductor |
2 / 2 page External Visual No abnormal exterior appearance Microscope (´10) Physical Dimensions Within the specified dimensions Using The calipers Mechanical Shock Three shocks in each direction should be applied along Capacitance Change : Within ±10% 3 mutually perpendicular axes of the test specimen (18 shocks) Tan δ, IR : initial spec. Vibration 5g's for 20min., 12cycles each of 3 orientations, Capacitance Change : Within ±10% Use 8"×5" PCB 0.031" Thick 7 secure points on one long side Tan δ, IR : initial spec. and 2 secure points at corners of opposite sides. Parts mounted within 2" from any secure point. Test from 10~2000㎐. Resistance to Solder pot : 260±5℃, 10±1sec. Solder Heat Capacitance Change : Within ±10% Tan δ, IR : initial spec. Thermal Shock -55℃/+125℃. Capacitance Change : Within ±10% Note: Number of cycles required-300, Tan δ, IR : initial spec. Maximum transfer time-20 sec, Dwell time-15min. Air-Air ESD AEC-Q200-002 Capacitance Change : Within ±10% Tan δ, IR : initial spec. Solderability 95% of the terminations is to be soldered a) Preheat at 155℃ for 4 hours, Immerse in solder for 5s at 245±5℃ ldti l b) St i f 8 h I i ld f 5 t 245 5℃ Velocity Performance Test condition Duration Wave Appearance : No abnormal exterior appearance Appearance : No abnormal exterior appearance Appearance : No abnormal exterior appearance 1,500G Peakvalue Appearance : No abnormal exterior appearance 0.5ms Half sine 4.7m/sec. Appearance : No abnormal exterior appearance evenly and continuously b) Steam aging for 8 hours, Immerse in solder for 5s at 245±5℃ c) Steam aging for 8 hours, Immerse in solder for 120s at 260±5℃ solder : a solution ethanol and rosin Electrical Capacitance : Within specified tolerance The Capacitance /D.F. should be measured at 25℃, Characterization Tan δ (DF) : 0.025 max. 1㎑±10%, 1.0±0.2Vrms IR(25℃) : More than 10,000㏁ or 500㏁×㎌ I.R. should be measured with a DC voltage not exceeding IR(125℃) : More than1,000㏁ or 10㏁×㎌ Rated Voltage @25℃, @125℃ for 60~120 sec. Whichever is Smaller Dielectric Strength Dielectric Strength : 250% of the rated voltage for 1~5 seconds Board Flex Bending to the limit (2㎜) for 5 seconds Capacitance Change : Within ±10% Terminal 18N, for 60±1 sec. Strength(SMD) Capacitance Change : Within ±10% Beam Load Destruction value should not be exceed Beam speed Chip Length ≥ 3.2㎜ 2.5±0.25㎜/sec a) Chip Thickness < 1.25㎜ : 15N b) Chip Thickness ≥ 1.25㎜ : 54.5N Temperature X7R Characteristics (From -55℃ to 125℃, Capacitance change should be within ±15%) C. Recommended Soldering method : Reflow ( Reflow Peak Temperature : 260+0/-5℃, 10sec. Max ) Meet IPC/JEDEC J-STD-020 D Standard * For the more detail Specification, Please refer to the Samsung MLCC catalogue. Appearance : No abnormal exterior appearance Appearance : No abnormal exterior appearance |
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