www.irf.com

2

IRS20124S(PbF)

Symbol

Definition

Min.

Max.

Units

High-side floating supply voltage

-0.3

220

Vs

High-side floating supply voltage

High-side floating output voltage

Vs-0.3

Low-side fixed supply voltage

-0.3

20

Low-side output voltage

-0.3

Vcc+0.3

Input voltage

-0.3

Vcc+0.3

OC pin input voltage

-0.3

Vcc+0.3

OCSET1 pin input voltage

-0.3

Vcc+0.3

OCSET2 pin input voltage

-0.3

Vcc+0.3

dVs/dt

Allowable Vs voltage slew rate

-

50

V/ns

Maximum power dissipation

-

1.25

W

Thermal resistance, junction to ambient

-

100

°C/W

Junction temperature

-

150

Storage temperature

-55

150

Lead temperature (soldering, 10 seconds)

-

300

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters

are absolute voltages referenced to COM. All currents are defined positive into any lead. The thermal resistance and power

dissipation ratings are measured under board mounted and still air conditions.

Description

The IRS20124 is a high voltage, high speed power MOSFET driver with internal deadtime and shutdown

functions specially designed for Class D audio amplifier applications.

The internal dead time generation block provides accurate gate switch timing and enables tight deadtime

settings for better THD performances.

In order to maximize other audio performance characteristics, all switching times are designed for immunity

inputs are compatible with LSTTL output or standard CMOS down to 3.0 V without speed degradation. The

output drivers feature high current buffers capable of sourcing 1.0 A and sinking 1.2 A. Internal delays are

optimized to achieve minimal deadtime variations. Proprietary HVIC and latch immune CMOS technologies

guarantee operation down to Vs= –4 V, providing outstanding capabilities of latch and surge immunities with

rugged monolithic construction.

V