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AT49F040 Datasheet(PDF) 1 Page - ATMEL Corporation

Part No. AT49F040
Description  4-Megabit 512K x 8 5-volt Only CMOS Flash Memory
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Maker  ATMEL [ATMEL Corporation]
Homepage  http://www.atmel.com
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AT49F040 Datasheet(HTML) 1 Page - ATMEL Corporation

 
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4 Megabit
(512K x 8)
5-volt Only
CMOS Flash
Memory
Preliminary
Features
Single Voltage Operation
- 5V Read
- 5V Reprogramming
Fast Read Access Time - 90 ns
Internal Program Control and Timer
16K bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte By Byte Programming - 50 µs/Byte
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
- 50 mA Active Current
- 100
µA CMOS Standby Current
Typical 10,000 Write Cycles
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
The AT49F040 is a 5-volt-only in-system Flash Memory. Its 4 megabits of memory is
organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvola-
tile CMOS technology, the device offers access times to 90 ns with power dissipation
of just 275 mW over the commercial temperature range. When the device is dese-
lected, the CMOS standby current is less than 100
µA.
To allow for simple in-system reprogrammability, the AT49F040 does not require high
input voltages for programming. Five-volt-only commands determine the read and
programming operation of the device. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the AT49F040 is performed by erasing
the entire 4 megabits of memory and then programming on a byte by byte basis. The
byte programming time is a fast 50
µs. The end of a program cycle can be optionally
detected by the DATA polling feature. Once the end of a byte program cycle has been
detected, a new access for a read or program can begin. The typical number of pro-
gram and erase cycles is in excess of 10,000 cycles.
Description
AT49F040
TSOP Top View
Type 1
PLCC Top View
0359C
DIP Top View
AT49F040
4-209


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