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AT29LV256 Datasheet(PDF) 2 Page - ATMEL Corporation

Part No. AT29LV256
Description  256K 32K x 8 3-volt Only CMOS Flash Memory
Download  10 Pages
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Manufacturer  ATMEL [ATMEL Corporation]
Direct Link  http://www.atmel.com
Logo ATMEL - ATMEL Corporation

AT29LV256 Datasheet(HTML) 2 Page - ATMEL Corporation

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Block Diagram
To allow for simple in-system reprogrammability, the
AT29LV256 does not require high input voltages for pro-
gramming. Three-volt-only commands determine the op-
eration of the device. Reading data out of the device is
similar to reading from an EPROM. Reprogramming the
AT29LV256 is performed on a sector basis; 64-bytes of
data are loaded into the device and then simultaneously
During a reprogram cycle, the address locations and 64-
bytes of data are captured at microprocessor speed and
internally latched, freeing the address and data bus for
other operations. Following the initiation of a program cy-
cle, the device will automatically erase the sector and then
program the latched data using an internal control timer.
The end of a program cycle can be detected by DATA poll-
ing of I/O7. Once the end of a program cycle has been
detected, a new access for a read or program can begin.
Description (Continued)
Device Operation
The AT29LV256 is accessed like an EPROM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high
impedance state whenever CE or OE is high. This dual-
line control gives designers flexibility in preventing bus
The AT29LV256 has 512 individual sectors, each 64-
bytes. Using the software data protection feature, byte
loads are used to enter the 64-bytes of a sector to be pro-
grammed. The AT29LV256 can only be programmed or
reprogrammed using the software data protection feature.
The device is programmed on a sector basis. If a byte of
data within the sector is to be changed, data for the entire
64-byte sector must be loaded into the device. The
AT29LV256 automatically does a sector erase prior to
loading the data into the sector. An erase command is not
Software data protection protects the device from inadver-
tent programming. A series of three program commands
to specific addresses with specific data must be presented
to the device before programming may occur. The same
three program commands must begin each program op-
eration. All software program commands must obey the
sector program timing specifications. Power transitions
will not reset the software data protection feature, however
the software feature will guard against inadvertent pro-
gram cycles during power transitions.
Any attempt to write to the device without the 3-byte com-
mand sequence will start the internal write timers. No data
will be written to the device; however, for the duration of
tWC, a read operation will effectively be a polling operation.
After the software data protection’s 3-byte command code
is given, a byte load is performed by applying a low pulse
on the WE or CE input with CE or WE low (respectively)
and OE high. The address is latched on the falling edge of
CE or WE, whichever occurs last. The data is latched by
the first rising edge of CE or WE.
The 64-bytes of data must be loaded into each sector. Any
byte that is not loaded during the programming of its sec-
tor will be erased to read FFh. Once the bytes of a sector
are loaded into the device, they are simultaneously pro-
grammed during the internal programming period. After
the first data byte has been loaded into the device, suc-
cessive bytes are entered in the same manner. Each new
byte to be programmed must have its high to low transition
on WE (or CE) within 150
µs of the low to high transition of
WE (or CE) of the preceding byte. If a high to low transition
is not detected within 150
µs of the last low to high transi-
tion, the load period will end and the internal programming
period will start. A6 to A14 specify the sector address. The
sector address must be valid during each high to low tran-

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