1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Amplifier Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

40

Vdc

Collector – Base Voltage

VCBO

75

Vdc

Emitter – Base Voltage

VEBO

6.0

Vdc

Collector Current — Continuous

IC

600

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

V(BR)CEO

40

—

Vdc

Collector – Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO

75

—

Vdc

Emitter – Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

6.0

—

Vdc

Collector Cutoff Current

(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

ICEX

—

10

nAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

(VCB = 60 Vdc, IE = 0, TA = 150°C)

ICBO

—

—

0.01

10

µAdc

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

IEBO

—

10

nAdc

Collector Cutoff Current

(VCE = 10 V)

ICEO

—

10

nAdc

Base Cutoff Current

(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

IBEX

—

20

nAdc

Order this document

by P2N2222A/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

P2N2222A

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

1

2

3

COLLECTOR

1

2

BASE

3

EMITTER