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NRVBM120LT3G Datasheet(PDF) 3 Page - ON Semiconductor

Part # NRVBM120LT3G
Description  Surface Mount Schottky Power Rectifier
Download  5 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NRVBM120LT3G Datasheet(HTML) 3 Page - ON Semiconductor

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MBRM120LT1G, NRVBM120LT1G, MBRM120LT3G, NRVBM120LT3G
http://onsemi.com
3
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
20
0
VR, REVERSE VOLTAGE (VOLTS)
10E−3
1.0E−3
100E−6
10E−6
1.0E−6
VR, REVERSE VOLTAGE (VOLTS)
5.0
10
15
20
0
100E−6
10E−6
5.0
10
15
TJ = 85C
TJ = 25C
TJ = 85C
TJ = 25C
100E−3
10E−3
1.0E−3
Ipk/Io = 5
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
45
75
25
TL, LEAD TEMPERATURE (C)
1.8
1.2
1.0
0.8
0.2
0
IO, AVERAGE FORWARD CURRENT (AMPS)
0.2
0
0.7
0.6
0.5
0.3
0.1
0
1.0
55
115
105
1.4
0.4
0.8
1.2
1.6
0.4
125
1.6
SQUARE
WAVE
dc
Ipk/Io = p
Ipk/Io = 10
Ipk/Io = 20
Ipk/Io = 20
Ipk/Io = 10
Ipk/Io = 5
Ipk/Io = p
SQUARE WAVE
dc
0.6
0.4
FREQ = 20 kHz
0.6
1.4
0.2
35
65
85
95
Figure 7. Capacitance
Figure 8. Typical Operating Temperature Derating*
12
0
VR, REVERSE VOLTAGE (VOLTS)
1000
100
10
VR, DC REVERSE VOLTAGE (VOLTS)
10
20
0
95
75
65
6.0
2.0 4.0
8.0 10
12
14
2.0 4.0
8.0
6.0
85
115
125
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation:
TJ = TJmax − r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
Rtja = 33.72C/W
119C/W
277.35C/W 338C/W
TJ = 25C
20
14
16
18
105
16
18
204C/W


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