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NGTB20N135IHRWG Datasheet(PDF) 1 Page - ON Semiconductor |
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NGTB20N135IHRWG Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 10 page © Semiconductor Components Industries, LLC, 2013 August, 2013 − Rev. 0 1 Publication Order Number: NGTB20N135IHR/D NGTB20N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Features • Extremely Efficient Trench with Fieldstop Technology • 1350 V Breakdown Voltage • Optimized for Low Losses in IH Cooker Application • Reliable and Cost Effective Single Die Solution • These are Pb−Free Devices Typical Applications • Inductive Heating • Consumer Appliances • Soft Switching ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 1350 V Collector current @ TC = 25°C @ TC = 100°C IC 40 20 A Pulsed collector current, Tpulse limited by TJmax, 10 ms Pulse, VGE = 15 V ICM 120 A Diode forward current @ TC = 25°C @ TC = 100°C IF 40 20 A Diode pulsed current, Tpulse limited by TJmax, 10 ms Pulse, VGE = 0 V IFM 120 A Gate−emitter voltage Transient Gate−emitter Voltage (Tpulse = 5 ms, D < 0.10) VGE $20 ±25 V Power Dissipation @ TC = 25°C @ TC = 100°C PD 394 197 W Operating junction temperature range TJ −40 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO−247 CASE 340AL C G 20 A, 1350 V VCEsat = 2.20 V Eoff = 0.60 mJ E Device Package Shipping ORDERING INFORMATION NGTB20N135IHRWG TO−247 (Pb−Free) 30 Units / Rail http://onsemi.com A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package MARKING DIAGRAM 20N135IHR AYWWG G E C |
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