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NGTB20N135IHRWG Datasheet(PDF) 1 Page - ON Semiconductor

Part # NGTB20N135IHRWG
Description  IGBT with Monolithic Free Wheeling Diode
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NGTB20N135IHRWG Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 0
1
Publication Order Number:
NGTB20N135IHR/D
NGTB20N135IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
Features
Extremely Efficient Trench with Fieldstop Technology
1350 V Breakdown Voltage
Optimized for Low Losses in IH Cooker Application
Reliable and Cost Effective Single Die Solution
These are Pb−Free Devices
Typical Applications
Inductive Heating
Consumer Appliances
Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
1350
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
40
20
A
Pulsed collector current, Tpulse
limited by TJmax, 10 ms Pulse,
VGE = 15 V
ICM
120
A
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
40
20
A
Diode pulsed current, Tpulse limited
by TJmax, 10 ms Pulse, VGE = 0 V
IFM
120
A
Gate−emitter voltage
Transient Gate−emitter Voltage
(Tpulse = 5 ms, D < 0.10)
VGE
$20
±25
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
394
197
W
Operating junction temperature
range
TJ
−40 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
TO−247
CASE 340AL
C
G
20 A, 1350 V
VCEsat = 2.20 V
Eoff = 0.60 mJ
E
Device
Package
Shipping
ORDERING INFORMATION
NGTB20N135IHRWG
TO−247
(Pb−Free)
30 Units / Rail
http://onsemi.com
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
MARKING DIAGRAM
20N135IHR
AYWWG
G
E
C


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